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| Silicon Phototransistor OP570 Series OP570 Features: * * * * * SMD plastic package High photo sensitivity Fast response time Choice of four lead configurations IR transmissive plastic package OP573 OP571 OP572 Description: Each device in this series is an NPN silicon phototransistor mounted in an opaque plastic SMD package, with an integral molded lens that enables a narrow acceptance angle and a higher collector current than devices without a lense. The OP570 series has four lead configurations and is compatible with most automated mounting equipment. The OP570 series is mechanically and spectrally matched to the OP270 series infrared LEDs. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. Applications: * * * * * * Non-contact position sensing Datum detection Machine automation Optical encoders IrDA Reflective and transmissive sensors Part Number OP570 OP571 OP572 OP573 Ordering Information Sensor Viewing Angle Lead Length Axial Gull Wing Yoke Rev. Gull Phototransistor 25 OP570 OP571 OP571 OP572 1 OP573 Pin # Transistor Collector 1 Emitter 2 2 RoHS RoHS OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue 1.1 02/07 Page 1 of 3 OPTEK Technology Inc.-- 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323- 2396 sensors@optekinc.com www.optekinc.com Silicon Phototransistor OP570 Series OP573 DIMENSIONS ARE IN: [MILLIMETERS] INCHES OP570 TOLERANCE IS .0039 [0.1] OP571 OP572 2 1 Pin # 1 2 Transistor Collector Emitter OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue 1.2 02/07 Page 2 of 4 OPTEK Technology Inc. -- 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Silicon Phototransistor OP570 Series Absolute Maximum Ratings (TA=25C unless otherwise noted) Storage Temperature Range Operating Temperature Range Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] Power Dissipation Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 2.17 mW/ C above 25 C. -40o C to +85o C -25o C to +85o C 30 V 5V 20 mA 260 C(1) 130 mW(2) Electrical Characteristics (TA = 25C unless otherwise noted) SYMBOL Input Diode IC (ON) VCE(SAT) ICEO VBR(CEO) V(BR)ECO On-State Collector Current Forward Voltage Reverse Current Wavelength at Peak Emission Emission Angle at Half Power Points 2.5 30 5 0.4 100 mA PARAMETER MIN TYP MAX UNITS TEST CONDITIONS VCE = 5.0 V, EE = 5.0 mW/cm2 VCE = 5.0 V, EE = 0(2) IC = 100 A IE = 100 A (1) V nA V V IC = 100 A, EE = 2.0 mW/cm2 (1) Notes: 1. Light source is an unfiltered GaAl LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. (0.04 Ta-3.4) where Ta is the ambient temperature in C. 2. To calculate typical collector dark current in A, use the formula ICEO = 10 160% 140% Relative On-State Collector Current vs. Irradiance Normalized at Ee = 5mW/cm2 Conditions: VCE = 5V, = 935nm, TA = 25 C Relative On-State Collector Current vs. Temperature 140% 130% Normalized at TA = 25C . Conditions: VCE = 5V, = 935nm, TA = 25 C Relative Collector Current Relative Collector Current 8.0 120% 100% 80% 60% 40% 20% 120% 110% 100% 90% 80% 70% 0 1.0 2.0 3.0 4.0 5.0 6.0 2 7.0 -25 0 25 50 75 100 Ee--Irradiance (mW/cm ) Temperature--(C) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. -- 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Issue 1.2 02/07 Page 3 of 4 Silicon Phototransistor OP570 Series Relative Response vs. Angular Position 100% 2.00 Relative On-State Collector Current vs. Collector-Emitter Voltage IC(ON) - On-State Collector Current (mA) 1.80 1.60 1.40 4 mW/cm2 6 mW/cm2 5 mW/cm2 80% Relative Response 60% 1.20 1.00 0.80 0.60 0.40 1 mW/cm2 2 mW/cm2 3 mW/cm2 40% 20% 0.20 0 0.1 0.2 0.3 0.4 0.5 0% -90 -60 -30 0 30 60 90 Angular Position (Degrees) Collector-Emitter Voltage (V) Collector-Emitter Dark Current vs. Temperature 1000 Conditions: Ee = 0 mW/cm2 VCE = 10V Relative Response vs. Wavelength 100% Collector-Emitter Dark Current (nA) 80% Relative Response 0 25 50 75 100 100 60% 10 40% 1 20% 0 -25 0% 400 500 600 700 800 900 1000 1100 Temperature--(C) Wavelength (nm) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue 1.2 02/07 Page 4 of 4 OPTEK Technology Inc. -- 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com |
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